Περιγραφή
Features
Row cycle time: 46.5 ns
Programming power voltage (VPP): 2.5 V
Row active time: 33 ns
Memory layout (modules x size): 1 x 8 GB
JEDEC standard: Yes
Memory clock speed: 2133 MHz
Internal memory: 8 GB
Memory channels: Dual
RoHS compliance: Y
ECC: No
Memory bandwidth (max): 17 GB/s
Compatible chipsets: Intel® H110
Buffered memory type: Unregistered (unbuffered)
Refresh row cycle time: 260 ns
CAS latency: 15
Memory voltage: 1.2 V




Αξιολογήσεις
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